single igbtmod? hvigbt module 1800 amperes/1700 volts CM1800HCB-34N outline drawing and circuit diagram powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 1 12/08 dimensions inches millimeters a 7.480.02 190.00.5 b 5.510.02 140.00.5 c 1.50+0.04/-0.0 38.0+1.0/-0.0 d 6.730.004 171.00.1 e 4.880.004 124.00.1 f 1.570.008 40.00.2 g 0.79+0.04/-0.008 20.0+1.0/-0.2 h 0.800.008 20.250.2 j 1.620.012 41.250.3 k 3.130.012 79.40.3 l 2.240.004 57.00.1 description: powerex igbtmod? modules are designed for use in switching applications. each module consists of one igbt transistor in a reverse-connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: traction medium voltage drives high voltage power supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM1800HCB-34N is a 1700v (v ces ), 1800 ampere single igbtmod? power module. type current rating v ces amperes volts cm 1800 1700 dimensions inches millimeters m 0.510.008 13.00.2 n 2.420.012 61.50.3 p 0.590.008 15.00.2 q 1.570.012 40.00.3 r 0.200.008 5.20.2 s 1.160.02 29.50.5 t 1.10+0.04/-0.0 28.0+1.0/-0.0 u m4 metric m4 v m8 metric m8 w 0.280.004 dia. 7.00.1 dia. x 0.200.006 5.00.15 g t u nuts (3 typ) p q s a d ll l v nuts (6 typ) b w (8 typ) h j km nn x c f r e g e c c ee cc c cm eg e c e e c c e
CM1800HCB-34N single igbtmod? hvigbt module 1800 amperes/1700 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 2 12/08 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol CM1800HCB-34N units unction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c perating temperature t op -40 to 125 c collector-emitter voltage v e = 0v v ces 100 volts ate-emitter voltage v ce = 0v v es 20 volts collector current dc t c = 80c i c 1800 amperes ea collector current ulse i cm 300 amperes diode orward current t c = 25c i e 1800 amperes diode orward surge current ulse i em 300 amperes maximum collector dissipation t c = 25c ibt art t j static electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cuto current i ces v ce = v ces v e = 0v t j = 25c 8.0 ma v ce = v ces v e = 0v t j = 125c 1.0 ma ate-emitter threshold voltage v eth i c = 180ma v ce = 10v 5.0 .0 .0 volts ate eaage current i es v e = v es v ce = 0v 0.5
CM1800HCB-34N single igbtmod? hvigbt module 1800 amperes/1700 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 3 12/08 dynamic electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies v ce = 10v v e = 0v 352 n utput capacitance c oes = 100 h 1.2 n reerse transer capacitance c res v ce = 10v v e = 0v = 1 mh 5. n resistie turn-on delay time t don v cc = 00v i c = 1800a 0.5 thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance unction to case r thj-c er ibt .0 thermal resistance unction to case r thj-c d er di 13.0 contact thermal resistance case to in r thc- er module thermal rease applied .0 comparatie tracing index cti 00 clearance 1.5 mm internal inductance c-eint ibt art 10.0 nh internal ead resistance r c-eint ibt art 0.1 m
CM1800HCB-34N single igbtmod? hvigbt module 1800 amperes/1700 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 4 12/08 time, (s) transient impedance, rth (j-c) 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance characteristics (igbt & fwdi) 1.2 1.0 0.4 0 0.2 0.6 0.8 single pulse t c = 25c igbt = r th(j-c) q = 9k/kw fwdi = r th(j-c) d = 13k/kw collector-emitter voltage, v ces , (volts) collector current, i c , (amperes) collector-emitter saturation voltage characteristics (typical) 4.0 2.5 2.0 1.5 3.0 3.5 1.0 0 0.5 3500 3000 2000 1000 2500 1500 500 0 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (pf) 10 -1 10 0 10 1 10 2 capacitance vs. collector-emitter voltage (typical) 10 4 10 3 10 1 10 0 10 2 v ge = 15v t j = 25c t j = 125c free-wheel diode forward characteristics (typical) emitter-collector voltage, v ec , (volts) emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) 20 16 12 8 4 0 half-bridge switching energy characteristics (typical) 3000 half-bridge switching energy characteristics (typical) 200 0 1200 600 800 1000 0 3000 2500 1000 500 1500 2000 400 free-wheel diode reverse recovery energy characteristics (typical) reverse recovery energy, e rec , (mj/pulse) emitter current, i e , (amperes) gate resistance, r g , ( ? ) reverse recovery switching energy vs. gate resistance characteristics (typical) c ies c oes c res v ge = 0v f = 100khz t j = 25c gate charge, q g , (c) gate charge, v ge 0 4 8 16 12 20 i c = 1800a v cc = 900v t j = 25c 200 400 600 800 1000 1800 collector current, i c , (amperes) switching energy, (mj/p) 0 1000 500 1500 2000 2500 1600 1400 1200 v cc = 900v v ge = 15v r g(on) = 0.7? l s = 100nh t j = 125c 0 v cc = 900v v ge = 15v r g(on) = 0.7? r g(off) = 1.7? l s = 100nh t j = 125c inductive load 4.0 2.5 2.0 1.5 3.0 3.5 1.0 0 0.5 3500 3000 2000 1000 2500 1500 500 0 v ge = 15v t j = 25c t j = 125c e on e off 5 500 1000 1500 2000 4000 gate resistance, r g , ( ? ) switching energy, (mj/p) ? dv/dt (off) , (v/s) 0 2 1 3 4 3500 3000 2500 0 500 1000 1500 2000 4000 3500 3000 2500 0 v cc = 900v v ge = 15v i c = 1800a l s = 100nh t j = 125c dv/dt (off) = 20-80% inductive load v cc = 900v v ge = 15v i c = 1800a l s = 100nh t j = 125c dv/dt (off) = 20-80% inductive load e on e off 5 100 200 300 400 800 switching energy, (mj/p) ? dv/dt (rec) , (v/s) 0 2 1 3 4 700 600 500 0 1000 2000 3000 4000 8000 7000 6000 5000 0
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